The Principle and Introduction of Sapphire Furnace Dan Changjing application

The composition of aluminum oxide sapphire (Al2O3), is composed of three aluminum atoms and two oxygen atoms covalently type combination, the crystal structure of hexagonal lattice structure which is often used for the cut surface with A-Plane, C-Plane and R-Plane. Since sapphire optical penetration with very wide, from near UV (190nm) to mid-infrared have good light transmission. Therefore, the optical element is used in a large, infrared devices, laser lens material of high strength and mask material, which has high sound speed, temperature, corrosion resistance, high hardness, high light resistance, high melting point (2045 ℃), etc., it is a very difficult to process materials, it is often used as a material of the photovoltaic element. Currently high brightness white / blue LED depends on the quality GaN epitaxy (GaN) material quality, and the quality of the epitaxial GaN and sapphire substrate used is closely related to the quality of surface finish, sapphire (single crystal Al2O3) C surface and Ⅲ - Ⅴ and Ⅱ - Ⅵ family deposited film lattice constant mismatch between the rate is small, consistent with the high-temperature GaN epitaxial process requirements, such as the sapphire wafer produced white / blue / green LED of the key materials .