Tuesday, December 3, 2013

LED Sapphire Substrate

Sapphire (Al2O3, the English called Sapphire) is made of gallium nitride (GaN) epitaxial main substrate material
sapphire substrate
sapphire substrate
emitting layer, GaN can be used to produce ultra-high brightness blue, green, blue-green, white LED. 1993 Nichia (Nichia) developed a gallium nitride (GaN) as a material for blue LED, with MOVPE (metal organic vapor phase epitaxy) epitaxial technology, can produce high-brightness blue LED. 


Alumina composition sapphire (A12O3) is composed of three aluminum atoms and two oxygen atoms covalently binding type crystal structure of hexagonal crystal structure with the sapphire optical penetrate a wide range from the near UV (190nm ) to have a very good mid-infrared transmittance, and have loud-speed, high temperature resistance, corrosion resistance, high hardness, high melting point (20,452 degrees C), etc., often as optoelectronic component materials. On the ultra-high brightness white / blue LED GaN epitaxial quality depends (GaN) material quality, so the quality of the sapphire substrate surface finish used on sapphire (single crystal A12O3) C plane and III-V and II- VI of the lattice constant mismatch between the film deposition rate is small, consistent with GaN epitaxial process temperature requirements, so the production of the sapphire substrate becomes white / blue / green LED of the key material. 

Sapphire blue LED crystal grains of the material long cut from sapphire crystal rod is made of sapphire crystal rod is aluminum oxide (Al2O3) single crystal as a basis for long crystal, crystal pulling method adopted foster growth, nurturing approach because each Different manufacturers have different purity parameters. 

Sapphire Dan Changjing technology is not yet unified, multi-key technology from the United States, Japan, Russia and vendor master, which the United States and Japan have reservations for crystal growth technology that is difficult to obtain key technologies from other countries, so the Taiwanese manufacturers technology mainly from Russia. Is to Chaishi pulling method (CZ) crystal growth and the Kjeldahl method (KY) as a mainstream technology, one of the most mature and most mainstream KY method, the drill rate of 40-42%, the 28 kg boules terms long grain it takes about 10 days time, and 65 kg of need 12-14 days, large kg of boules is not required to spend time much higher, but there is yield intractable problems. 

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