Sapphire Materials for Infrared Transparent Window

infrared transparent window materials

800 years,the British astronomer Herschel first discovered infrared radiation.

1)Mechanical strength : infrared transparent window material should have sufficient strength to withstand the high speed movement of the pressure load ;

2)Thermal stability: the infrared transparent window material should be subjected to high aerodynamic heating and thermal shock caused by the change , the transmittance and the refractive index changes with temperature should be a significant change occurs;

3)Chemical stability: infrared transparent window material is exposed to the air, the air should be able to prevent the salt solution or etching gas corrosion , and difficult to deliquescence ;

4)High optical transmittance , must be able to efficiently transmit the ultraviolet to the infrared radiation ;

5)Good optical properties, optical scattering of small and good uniformity index;

6)To meet the requirements of large-size window.

Although today there are hundreds of species of certain bands of infrared radiation through optical materials , but can have both optical properties and can withstand harsh environments infrared transparent window material , but very few . Commonly used infrared transparent window has zinc sulfide (ZnS), zinc selenide(ZnSe), gallium arsenide (GeAs), sapphire (Sapphire), spinel (Spinel), alumina, aluminum nitride (ALON), yttrium oxide,(Yttria), magnesium oxide (MgO), diamond , magnesium fluoride (MgF2) and so on .Zinc sulfide, zinc selenide , gallium arsenide in the 8-12μm.Band has good permeability,but the high temperature chemical decomposition occurs lost performance. Diamond has excellent mechanical strength , optical properties and thermal conductivity , but also at 650 ℃ no longer applicable , for this would lead to oxidation and graphitization . Many oxides can not be used because severe thermal shock and stress can cause the material oxide atoms multi-photon absorption.It can be used to make high speed missile fairing only yttrium oxide material,spinel, aluminum nitride, alumina, sapphire and so on. Sapphire Single crystal as an excellent wave-transparent materials in the ultraviolet,visible,infrared,microwave waves have good penetration rate , to meet the multi-mode combined guidance(TV,infrared imaging,radar,etc.)requirements;also has a sapphire crystal excellent mechanical properties,chemical stability, high temperature resistance , high strength , hardness, can meet hypersonic missile wave-transparent materials for the demanding requirements.Preparation of the material aspects of sapphire single crystal can be grown,and then molding , product performance and performance of the same single crystal and other materials using mainly hot casting powder sintering , and its performance to be slightly lower than the original.Therefore, sapphire has become advanced national high-speed fighter aircraft, missiles and other medium-wave infrared transparent window material an excellent choice . United States, Britain,Russia,Israel and other military powers are struggling to carry out large-size sapphire infrared window studies,and has been implemented.Now ¢ 300-500mm ¢ 120mm sapphire crystal or sapphire hemispherical dome above preparation capabilities , used in the United States series Aim-9X Sidewinder air to air missiles , the South African A-Darter air missiles, the Israeli Python-4 air to air missiles, advanced English Asraam close air to air missiles. Sapphire window with excellent performance as a wide-band optical materials optoelectronic devices for military applications, the time is not very long. In the 1960s, the U.S. military has this despite the research, but the real sapphire window for a larger range of applications and development in the 1980s , which is computer-controlled optical processing machine development are closely related . Recently, in some reports , we can see some very specific applications .For example in 2001 , the U.S. Army has ordered the direction of Exotic photoelectric Branch 88 sapphire window , equipped with F-16 fighter airborne navigation pod FLIR target . 2000 Thales UK signed a $ 33 million photoelectron photoelectric mast contract to produce six CM010 Optronic Mast.CM010 photoelectric mast all with sapphire crystal viewing window . U.S. new generation fighter.F-35 Joint Strike Fighter optical tracking system (Electro-Optical Targeting System, EOTS) window consists of seven sapphire wafer surface coating composition , which provides 360-degree omni-directional vision. Figure 6 shows the F-16, F-35 fighter jets and optical tracking system sapphire windows.
Over the next 200 years , people were Infrared Physics , infrared optical materials, infrared optical systems, infrared detector , infrared spectroscopy and related applications for exploration and research , in which the background research for military purposes is undoubtedly bear the brunt. For example, the mid- 1950s , the infrared -guided air- point sources - air missile was born , this is the famous American "Sidewinder" missiles;1960s developed airborne infrared scanners, looking infrared equipment and the early space infrared instruments ; 1970s emerged common components infrared camera , infrared warning systems and spaceborne infrared instrument more space ; 1980s development of FPA -based infrared infrared military equipment and space reconnaissance,early warning technology . Recently, the infrared technology has been successfully used not only in the field of full play to its advantages , will be more effectively applied to the rapid development of optoelectronic countermeasures,optical communications and directed energy weapons . In the future new combat forms and characteristics,the various fighters, missiles are increasingly high speed, in order to improve their offensive and penetration ability . The fourth -generation fighter aircraft can cruise at supersonic speed , next-generation air - air combat missiles , cruise speeds of up to 3 ~ 5Ma. Meanwhile, in severe electrical interference conditions, in order to improve the sensitivity and anti-jamming capability missiles , guided way gradually to a variety of guided modes composite ( TV , infrared imaging , radar , etc.)development.Therefore, in order to achieve future fighter aircraft, missiles, high-speed,multi-mode combined guidance , and its infrared detectors infrared transparent window material properties should meet the following basic requirements.

Sapphire Substrate In Microelectronics Substrate

sapphire substrate body

GaN Epitaxial Semiconductor Substrate Body

Conventional silicon and gallium arsenide semiconductor materials were first-generation and second -generation representatives to promote the development of their microelectronics, photonics technology development , as a basis of the information technology has brought tremendous change people's lives.However, the performance limitations of the material itself , the first and second generations of semiconductor material can only work in an environment below 200 ℃ , and anti-radiation, high voltage breakdown performance and so can not meet the development of modern electronic technology for high-temperature , high-power , high-frequency , high-pressure and anti-radiation, capable of emitting blue new requirements. In this case , the choice of materials, new electronic devices launched the third generation of semiconductors, GaN and SiC wide bandgap semiconductor materials become the representative of the third generation.In the third -generation semiconductors,GaN materials, more and more people 's attention. GaN has many advantages: the band gap , high electron saturation velocity , good thermal conductivity, high breakdown electric field , low dielectric constant , good thermal stability , chemical stability . Thus, the third -generation semiconductor material properties will eventually cause them to be in the aerospace, exploration , nuclear energy development , satellite, communications, automotive engines, displays, new light source , laser printing, memory, and other fields have broad application prospects . As early as the 1970s, people began to explore the GaN growth process , but due to technical limitations material growth can not get high-quality GaN crystal. With the growth of technology development , has appeared in molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) and other new methods, which greatly promoted the research on GaN . Sapphire crystal as a substrate material, the GaN crystal has the same structure, with a high temperature chemical stability , thermal properties, and is easy to obtain large size and relatively cheap, etc. , although there is a big GaN lattice mismatch . With the growth of technology continues to improve , has been able to produce a quality epitaxy on sapphire
GaN crystal,( 0001 ) plane of the sapphire wafer has a practical application of the most desirable substrate material .

SOS Microelectronic Circuits

SOS (Silicon on Sapphire) microelectronic circuits , refers to the sapphire wafer ( 1-102 ) plane of a layer of a silicon single crystal grown by heteroepitaxial film , and then the silicon single crystal film technology for fabricating a semiconductor device . SOS microelectronic circuits due to having high speed, low power consumption and anti- radiation,etc.,so the watch type mobile phone , desktop or laptop computers, high-speed, high-frequency radio communications, small satellites , spacecraft , and the development of the space shuttle have a particularly important application . Sapphire and silicon have similar thermal expansion coefficient. In the ( 1-102 ) plane of the sapphire wafer and, using hetero-epitaxially grown layer method
( 100 ) plane of the silicon single crystal film , and then the silicon single crystal film fabricating a semiconductor device . Sapphire crystal structural integrity of the substrate is to guarantee access to the structural integrity of the main conditions for silicon single crystal film .

ZnO,InN,And Other Epitaxial Film Substrate Body

Temperature band gap of ZnO 3.37eV, corresponding to ultraviolet light for direct bandgap wurtzite structure Ⅱ - Ⅵ semiconductor crystals with similar semiconductor GaN, ZnS , compared , ZnO has higher exciton binding energy , and its value of 60meV, can greatly reduce the low temperature lasing threshold. Thus ZnO at room temperature or higher temperatures are expected to achieve the exciton gain, thus the low threshold to obtain short-wavelength lasers applications . Since the implementation of ZnO UV optically pumped lasing at room temperature after.

The growth of ZnO single crystal thin film , p-type doping research worldwide attracted the attention of many research groups . Sapphire by low cost and high crystal ZnO has been widely used as a substrate epitaxial layer .
In Ⅲ - Ⅴ nitride in , InN is attracting more and more attention . And GaN, AlN , compared , InN Has the smallest effective mass , in theory, has the highest carrier mobility , so that it is in high-speed micro Electronic devices has a broad application prospects. While Ⅲ - Ⅴ nitride , it also has the smallest
Direct band gap , and its value is about 0.8eV , which makes Ⅲ - Ⅴ nitride AlN emission wavelength from the ultraviolet (6.2eV) extending into the infrared region of InN (0.8eV), a light emitting device prepared in a suitable materials . However, preparation of InN single crystal is very difficult , so far people InN research is still in the initial stage , in foreign countries , Masuoka and others with MOVPE method on sapphire substrates have been the first successful single-crystal InN epitaxial film . In China, Xiao Hongling , who use radio frequency plasma-assisted molecular beam epitaxy (RF-MBE) method on sapphire substrate obtained crystals of good quality single crystal InN epitaxial film . Superconducting thin films such as YBa2Cu3O7 - δ (YBCO) of the microwave surface resistance Rs than conventional metal materials several orders of magnitude , can be used to design high-performance passive microwave devices, such as filters , resonators , delay lines . Sapphire crystal dielectric constant , low dielectric loss , microwave performance, mechanical strength, and thermal conductivity is high , the substrate is LaAlO3.

More than 20 times . Large areas of industrial production of sapphire single crystal materials have been relatively inexpensive price , and therefore is a good substrate material . As the ferroelectric substrate material : used ferroelectric memory , spatial light modulators, optical switches, etc. ferroelectric random access memory , infrared detectors , drive, optical modulators, displays , etc., with excellent performance compelling and use value.

Sapphire crystal as a substrate material , the demand on the international market is getting bigger, while the crystal quality and size requirements are also rising .

Laser Host,Optics And Other Uses

Sapphire crystal is an excellent laser host material, such as titanium-doped

laser host,optics

sapphire crystal isthe world's most excellent wideband tunable laser crystal recently, its tunable wavelength range of 660 ~ 1200nm. Moulton first reported in 1982 since the laser oscillation , because it has a wide tuning range and a high gain , etc., have been widely studied and adequate . Sapphire optical penetration with a very wide range , from the near ultraviolet light in the infrared wavelengths 0.9nm to 5.5μm have good light transmittance , and in the band of 0.25 ~ 4.5μm remain penetration of more than 80% rate ; making large size, high integrity sapphire single crystal has been used as the U.S. LICO (Laser interferometer gravitational observatory) engineering of large-scale gravity waves measuring cosmic interference means the preferred spectral element matrix material . Sapphire crystal in the civilian field of application has also been very extensive, for example, in medical equipment, environmental protection equipment , laser equipment, chemical equipment , high vacuum test equipment, textile industry, fiber guide wire panels , barcode scanners scan window , never worn type Rado watch Mongolia and so on.

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Cold Heart Put The Shoulder Trace Czochralski Method

Cold Heart put the shoulder trace Czochralski (SAPMAC) also known as micro- pulling rotation Kyropoulos is Harbin University Institute of composite Materials and Structures on Kyropoulos and improved Czochralski method evolved on the basis for the growth of large-size sapphire crystal method , mainly in Ukraine Donets produced Ikal-220 -type crystal growth furnace based on the improvement and development. Crystal growth system mainly comprises a control system, vacuum system , heating element , cooling systems and thermal protection systems. The figure is a cold heart to put the shoulder trace Czochralski system diagram , SAPMAC single crystal growth method , the outlook is usually pear-shaped , crystal diameter can grow into a crucible diameter smaller than 10 ~ 30mm size. The seed crystal is processed into a split form , the use of seed crystals of the heat exchanger at the bottom clamp . Heat fixing the seed crystal to be completed , the crystal rotation and pulling , and the heat exchanger , between the crystal and the melt heat exchange effect. Heater , cooling systems and thermal protection system synergy for crystal growth to provide a uniform , stable and controllable temperature field . According to which the seeded crystal growth , put the shoulder , Equal and annealing and the cooling phase is characterized by adjusting the temperature of the working fluid in the heat exchanger , flow rate , heating temperature (heating body can provide the crucible wall temperature ) can precise control of the crystal / melt temperature gradient , the heat transfer to complete crystal growth . Cold Heart put the shoulder trace sapphire crystal grown by Czochralski method , usually the entire control of the crystal growth process is divided into four stages, namely seeding , put the shoulder , Equal , annealing and cooling stage . Seeding stage and put the shoulder is the use of adjusting heat exchanger cooling capacity , the appropriate heating temperature with a certain reduction ( heating system can provide the crucible wall temperature ) way to achieve the crystal necking and put the shoulder control . At this time the crystal growth rate and the temperature gradient projection screen is large, which is conducive to the use of larger discharge shoulder angle , reducing the distance put the shoulder , preventing the interface flip while being able to dislocations within the seed crystal defects such as the original fast from crystals spread to the crystal surface , effectively reducing the content of the crystal defects . A large temperature gradient interface can also improve the driving force of crystal growth , to increase the interface stability. Subject to the crystal diameter grows to the desired size ( cold heart put the shoulder trace Czochralski crystal diameter can grow to distance crucible 1 ~ 3cm) , the crystals begin to equal diameter growth path into the other phase. As the crystal size grew up , the heat exchanger efficiency decreases rapidly to the crystal growth , the crystal growth phase into the other path , mainly by reducing the heating temperature ( heating system can provide a crucible wall temperature ) to achieve crystals growth .

Main Features of The Method :

1)Put the shoulder by a cold heart , ensuring the large size of crystal growth , the entire end product to the genetic characteristics of the process of crystallization good material quality.

2)High-precision micro- pulling with energy control , so that the crystal growth process without significant thermal disturbance probability of defect initiation significantly lower than other methods .

3)Since only trace Thira , reducing the temperature field perturbations. Make more uniform temperature field , thus ensuring crystal Health
Long success rate.

4)In the crystal growth process , the crystal is not made ​​crucible , is still in the hot zone. Can be precisely controlled
The cooling system of its speed and reduce the thermal stress.

5)Suitable for the growth of large-size crystal material is Kyropoulos comprehensive utilization of more than 1.2 times .

6)Use water as the working fluid within the heat exchanger , the crystal can be achieved in-situ annealing , the test cycle shorter than other methods , the cost is low.

7)In the crystal growth process , can facilitate the observation of crystal growth ;

cold heart out the shoulder micro system diagram czochralski method

8)The crystal growth of the free liquid surface , the crucible is not mandatory effect, can reduce the stress of the crystal ;

9)It can easily use the desired orientation seed crystal and the " necking " process, helps to relatively fast rate.

Cold Heart Put The Shoulder Micro System Diagram Czochralski Method

1.Cooling Water Rod;2.Heater;3.Seed Holder;4.Level Thermal Diffusion;5.Crucible;6.Crystal;7.S/L interfaces;8.Melt;9.Bracket;10.Radiating

Vertical and Horizontal Temperature Gradient Cooling Method

Vertical and horizontal temperature gradient cooling (Vertical Horizontal

Gradient Freezing;VHGF) method, mass production LED sapphire crystal rod

LED sapphire crystal rod

, this technology is based on the vertical temperature gradient cooling (Vertical Gradient Freezing; VGF) method based on the use of VGF Growth of GaAs crystal rods , low potential density can reach high quality ingot . Divided by the VGF method is based outside , STC adopted VHGF Act is combined horizontal temperature gradient in the cooling process , this way , can make long grain size (diameter and height ) and long grain shape is relatively unrestricted . All in all , the temperature gradient method (TGT), Bridgman (VGF) and the vertical and horizontal temperature gradient cooling method (VHGF) are taking different approaches to change the hot zone temperature gradient to grow sapphire crystals, however , VHGF France STC companies in Korea patents, the specific methods adopted to change the crystal growth temperature gradient is unknown. Another corundum , Fujian Xin Jing Precision Technology Co., Ltd. developed the " top-seeded vertical temperature gradient method " technology ( temperature gradient in the crucible seed is lower ) , is also an approach of this kind .

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Bridgman

Bridgman(Vertical Gradient Freeze method,VGF)method,this method is similar to the horizontal zone melting method , the main way is to move the crucible , the melt temperature gradient within the soup , and then begin to grow crystals. Bridgman method uses a heater is divided into two parts , the top of the furnace body heater temperature is high, the bottom temperature is lower, the temperature difference generated by the heater causes the temperature gradients , and thus crystal growth . Since the growth process , the temperature of the heater is constant, the crystal growth of the solid-liquid interface when the distance to the heater is fixed to the crucible at this time decreased, so that molten metal through the solid-liquid interface , the use of Bridgman way , it solidified molten metal to form a single crystal normal . Principle of growth shown. Bridgman following features:

1)The shape of the crystal can vary the shape of the crucible , for shaped crystal growth ;

2)It can be added directional growth of single crystal seed can also be natural nucleation , based on the principle of geometric phase crystal growth ;

3)It can be closed or semi-closed crucible growth . Prevent melt dopant volatilization , causing
Compositional deviation and doping concentration, and can be hazardous substance pollution of the surrounding environment ;

4)It's suitable for large size , the number of multi- crystal growth . A furnace can grow a few or dozens of different root
Sizes of crystals ;

5 )Operation process is relatively simple and easy to implement procedures and automation . Bridgman 's main drawback is as follows:

a)The whole process of crystal growth within the crucible , not easy to directly observe the growth of the crystal . But
Lower melting point of the organic crystal growth exception can be used to facilitate the observation tube furnace or crucible .

b)Different kinds of crystalline material of the crucible to the physical and chemical properties have specific requirements . In particular, the crucible with the crystalline material matching the thermal expansion coefficient to the right, the volume expansion is not suitable for crystal growth of the crystal material .

c)Crystals in the crystallization process, the crucible crucible easy to produce compressive stress in the crystal nucleation and parasites , so
Crucible inner surface finish have higher requirements .

d)Bridgman crystal growth crucible during descent generally does not rotate , so grow out
Uniformity of the crystal grown by Czochralski method is often not as good out of the crystal

Bridgman's schematic diagram,left melt more crystals less;Right melt fewer larger crystals

Bridgman's schematic diagram

Temperature Gradient Method

Temperature gradient method (TGT) is determined by China Institute of Optics and Fine Mechanics , Chinese Academy of Shanghai Zhou Yongzong et al in 1980 in order to achieve a first orientation of the seed crystal growth induced by the vertical temperature gradient method. Temperature gradient method is based on directional single seed -induced melt crystallization method . Including placing it in a simple bell-type vacuum resistance furnace crucible , heating element and shielding device 14 is a device diagram . This device uses americium crucibles, graphite heating element . Crucible bottom center of a seed tank, avoid hoe up soil around plants in the chemical feed grain were melted down when . In order to increase the stability of the crucible , the seed rod in the positioning groove fixation circular groove. Temperature field by a graphite heating element and cooling devices together provide . Heating body is cut into a rectangular wave by the upper and lower grooves of the cylindrical power circuit strip , mounted on the cylinder water-cooled graphite electrode connected to the electrode plates . The upper slat punching according to certain rules to regulate the heating resistor so energized causing near-linear temperature difference from top to bottom . The lower temperature by the heat generator and the water-cooled graphite heating element to create a conductive electrode plate . Temperature field near the seed must rely on water-cooled crucible together provide heat conduction rod . Schematic diagram of the temperature gradient method .

Main features of the method :

1)Crystal growth temperature gradient opposite to the direction of gravity , and the crucible , the crystal and the heating body is not moving , the crystal growth interface stability, no mechanical perturbations , buoyancy convection is small;

2)After crystal growth,surrounded by the melt , is still in the hot area, which can be precisely controlled cooling rate , reducing the thermal stress;

3)Crystal growth,surrounded by solid-liquid interface in the melt , thermal disturbance before reaching the solid-liquid interface can be reduced and even eliminated interface for Uniform temperature gradient;

4)Crystals grown larger , it is difficult to create a good environment temperature field , the crystal easy to burst;

5)Respectively crystal blank to high temperature oxidation, reduction annealing

crystal growth

atmosphere , the blank subsequent treatment process more complicated. Zhou Yongzong etc. using this method has grown out of the diameter ¢ 100mm, ¢ 110mm, ¢ 120mm high quality sapphire crystal. Temperature gradient method grown sapphire crystal , crystal showing different colors in different parts of the general upper light red, light yellow green tail . The crystals were through the oxidizing atmosphere , reducing atmosphere annealing , the crystal colorless , transparent crystal integrity , the optical transmittance and optical homogeneity significant Increased. Crystal growing apparatus before and after annealing the crystal shown in Fig.

1.Insulation boards;2.Heating element;3 Crucible;4.Graphite electrode;5.Cooling Pipe

Heat Exchange Method

Heat exchange method referred HEM method.Heat exchange method is a method for

a schematic diagram of the heat exchanger method

growing large sapphire crystal growth technology and invention.1970 Schmid and Viechnicki first heat exchange method using a large piece of sapphire crystal growth.The principle is to use a heat exchanger to dissipate the heat , so that crystal growth region is formed at the cold temperature of the hot longitudinal,gradient , and then by controlling the gas flow in the heat exchanger (He cooling source ) to change the size of the heating power level to control the temperature gradient within the crucible to reach a molten metal from the bottom up slowly solidified into crystals of the objective Figure shows a schematic diagram of the heat exchanger method.Main features of the method :

1)The temperature gradient opposite to the field of gravity , crucibles , crystals, and neither heat movement crystal growth
Long interface stability, no mechanical perturbations , buoyancy convection is small, eliminating the mechanical movement caused by crystal defects ;

2)Remain after the crystal growth in the hot zone , the control temperature of the helium flow rate can slow, the crystallization temperature
Reduced , to achieve in-situ annealing , to reduce the crystal and the resulting thermal stress cracking and crystal dislocations and other defects;

3)Solid-liquid interface in the melt inclusions , the thermal disturbance before reaching the solid-liquid interface can be reduced or even
Excluded , the interface obtained a uniform temperature gradient ;

4)Heat exchange method is the most suitable for the growth of various shapes and sizes sapphire crystal ;

5)Equipment demanding conditions , the entire complex process, crystal growth cycle is long, requires a lot of cold helium,coolant,high cost. Heat exchange method is mainly applied in the United States and developed the process for the United States Crystal Systems company's patented technology.Crystal Systems Corporation heat exchange with sapphire crystal grown by more than 30 years of history, represents the highest international standards .

Chandra , who use heat exchange has grown out of the diameter ¢ 200mm, ¢ 340mm ¢ 380mm diameter and height ratio 2:1 high quality crystal , as shown in 13b, c shows,and hopes to eventually be able to grow in diameter ¢ 750mm optical grade sapphire crystal.

Note:

(a) Schematic crystal furnace ;
(b) sapphire crystal ¢ 380mm;
(c) sapphire crystal ¢ 340mm

Dingbian Film Crystal Growth Method of Feeding

Dingbian membrane feeding method (Edge-defined Film-fed Growth, EFG) method known

the principle of crystal growth

The principle of crystal growth shown in Fig.

The raw material is placed iridium crucible, the radio-frequency induction heating coil heating material was melted in the crucible placed in the middle an iridium mold, by capillary action so that molten flatten the iridium mold top surface to form a thin film, put crystal the colors of the touch to the film, then the film of the end surface of the seed crystal and the seed crystal of the same crystal structure. Seed and then slowly pulled upward, gradually growing single crystals.

Meanwhile the supply of molten crucible supplementary film, because the film's edges defined by the iridium mold and play continued feeding for crystal growth, and therefore the feeding method is called defining edge film, referred to guide membrane.

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as guided modes.

Czochralski Crystal Pulling

Czochralski crystal pulling (Czochralski method)

Czochralski crystal pulling

Referred to CZ method.Pulled from the melt Czochralski crystal growth method
First in 1918 , and since 1964 Poladino Rotter first applied to the sapphire crystal growth , the successful growth of high quality sapphire crystal , crystal growth schematic diagram shown in Figure 11 . After the first material is heated to melting temperature difference between the melting point to form a cold. Thus molten metal solidification begins on the seed surface and the same crystal growth and crystal structure of a single crystal seed . Seed simultaneously pulled up very slowly , and is accompanied by a certain rotational speed , with the seed crystal pulled up , gradually solidified molten metal at the liquid-solid interface seed , and thus the formation of a single axisymmetric Jingjing stick. Pulled up in the process, pulled by controlling the pace of deployment , were grown crystal neck (Neck), Crystal Crown (Shoulder), crystal body (Body) and crystal tail. Each part has its own purpose , crystal growth is mainly used to eliminate cervical dislocation . Because the crystal growth process is complex, difficult to control the amount of dislocations generated , so most of the crystal growth process , both to eliminate dislocations as the main choice. End grain long neck , to be slow lifting speed , the crystal diameter is increased to the desired size , this step is the crown crystal growth . When the crystal diameter is increased to the desired size , with regard to the speed constant thrust , this part of the crystal diameter is fixed, which is part of the crystal body . This section is to be used as part of the substrate material for industrial use , so the growth , the need to be careful . When the crystal length when finished , it is necessary to leave the molten ingot , then pulled up the speed increases , the grain diameter of the rod out, until it becomes point-like , and then be separated from the molten metal . End of this crystal growth step , which is intended to prevent molten crystal rod and rapid separation , the resulting thermal stress , if the thermal stress generated in the separation , this thermal stress will produce crystal rods and slip dislocation lines defects. In the current semiconductor industry,CZ method is the most commonly seen in the crystal growth method , since a larger diameter can grow the crystal, so about 85 % of the semiconductor industry are used
CZ method to grow a single crystal rod . Main features of the method :

1)The crystal growth process,can facilitate the observation of crystal growth;

2)The free surface crystal growth , the crucible is not mandatory effect, can reduce the stress of the crystal ;

3)You can easily use the seed desired orientation and the " necking " process, helps to relatively fast growth rate higher quality crystals with good integrity;

4)Crystals,the crucible and the forced convection caused by the rotation of gravity caused by natural convection interactions , the complex role can not overcome the flow , easy to produce crystal defects;

5)Mechanical perturbations in the growth of large diameter crystal is easy to make the crystal defects .

Kjeldahl Crystal Growth Method

Kjeldahl crystal growth method (Kyropoulos method) referred KY France , mainland

Kjeldahl crystal growth method

Kyropoulos Kyropoulos is first proposed in 1926 and used for the crystal growth , after a long period of time, the methods are used for large size crystals of halogen , hydroxides and carbonates of crystal with . The 1960s and 1970s,the former Soviet Union Musatov improvements, this method is applied to the preparation of sapphire crystal.

The single crystal growth method,the appearance is usually pear-shaped , the crystal can grow to a diameter smaller than the inner diameter of the crucible 10 ~ 30mm in size. The principle and the method of Czochralski crystal pulling (Czochralski method) is similar to the first material is heated to form a molten melt after melting , then the seed crystal (Seed Crystal, also known as the seed crystal bar ) come into contact with molten metal surface, molten crystal species and start to grow on the solid-liquid interface and the same crystal structure as the seed crystal , seed crystal pulled up very slowly , but on the seed crystal pulled up over time to form a crystal neck , to be molten seed interface with the solidification rate is stable, the seed will no longer be pulled up , nor for rotation , only way to control the cooling rate of the single crystal solidification from the top down gradually , and finally solidified into a whole single crystal ingot Figure 10 is Kyropoulos (Kyropoulos method) a schematic representation .

Kyropoulos is the use of temperature control to grow crystals, it Czochralski crystal pulling out the biggest difference is the only crystal neck, crystal body part is relying on the growth of temperature change , pulled and rotated less interference , better control processes and pulling the neck , adjust the heater power , the molten material to achieve the most appropriate length of crystal temperature range , so to achieve the best growth rate of , and thus the best quality sapphire single crystal to grow.Main features of the method :

1)During the entire length of the crystal , the crystal is not made ​​crucible , is still in the hot zone. So that it can accurately control the cooling rate , reduce the thermal stress ;

China called Kyropoulos.
2)Crystal growth , the solid-liquid interface in the melt siege. Such melt surface temperature perturbations and mechanical perturbations before reaching the solid-liquid interface can be reduced resulting in elimination of the melt ;

3)Selection of soft water as the working fluid within the heat exchanger with respect to the use of helium as a coolant heat exchange method can effectively reduce the cost of experiments ;

4)Existing in the crystal during crystal growth and rotational movement , be exposed to mechanical vibration.

Sapphire Dan Changjing Technological Development

Since 1885 by the Fremy, Feil and Wyse use oxyhydrogen flame melting natural

sapphire dan changjing technological development

ruby ​​powder and potassium dichromate was made ​​a sensational " Geneva rubies " artificial growth sapphire studies so far more than 100 years of history. In the meantime, in order to adapt the development of science and technology and industrial production for the sapphire crystal quality , size and shape of the specific requirements, in order to improve the yield of the sapphire crystal,utilization,and reduce costs, the growing method and the sapphire related theories Numerous studies , with remarkable results. Has been a high level of technology and greater production capacity , ancillary services whom the crystal growth equipment - crystal furnace also will get a rapid development. With the application of sapphire crystal rapid expansion of the market,their equipment and technology is also the last century has made rapid development.Crystal sizes from 2 -inch expanded to the current 12 inches.

Low-cost, high-quality large-size sapphire single crystal growth has become an urgent task facing.Overall, sapphire crystal growth method can be divided into solution growth , melt growth , the growth of three kinds of gas , which has a melt growth method due to fast growth rate , high purity and crystal integrity and good features , but have become is the preparation of large-size and the specific shape of the crystal crystal growth method most commonly used . Currently available to melt growth method to artificial sapphire crystal growth methods include flame fusion method, Czochralski method , zone melting method, guided mode method, moving crucible method, heat exchange, the temperature gradient method, Kyropoulos law. The Kyropoulos grown sapphire crystal craft about the current market share of 70%. LED sapphire substrates in crystal technology is part of a developing extreme , since the confidentiality of the crystal growth technology , the majority of the crystal growing apparatus according to customer requirements are customized according to the technical characteristics , or to use other transformation from the crystal growing apparatus . Here are some current international mainstream sapphire crystal growth method .

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Sapphire Crystal Applications

The chemical composition of the sapphire crystal alumina (α-Al2O3), is composed

sapphire crystal

of three aluminum atoms and two oxygen atoms covalently type combination , the crystal structure of hexagonal crystal structure , as 2,3,4 shown . In terms of color , pure alumina is rendered transparent and colorless crystals , because of different color element ion penetration in the growing sapphire,thereby sapphire show different colors. When in nature when grown sapphire crystal containing titanium ions (Ti3 +) and iron ions (Fe3 +) , makes the crystal appear blue , and a blue sapphire (Blue Sapphire). When a crystal containing chromium ion (Cr3 +) , makes the crystal appear red, and a ruby (Ruby). And when the crystal containing nickel ions (Ni3 +) , the cause is yellow crystals , which become yellow sapphire . Table 1 lists the characteristics of sapphire table.Sapphire crystal chemically very stable, generally insoluble in water and from acid , alkali etching , only at higher temperatures (300 ℃) for the hydrofluoric acid , phosphoric acid and potassium hydroxide of melting erosion.

Sapphire crystal is very hard, as the Mohs hardness 9 , second only to the hardest diamond . It has good light transmission, thermal conductivity and electrical insulation, mechanical mechanical properties, and has the characteristics of abrasion and erosion . Sapphire crystal melting point of 2050 ℃, boiling point 3500 ℃, the maximum operating temperature up to 1900 ℃. Therefore, the sapphire crystal as an important technique that has been widely used in science and technology, defense and civilian industries in many areas .

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Sapphire and LED

LED sapphire refers to a substrate sheet for the processing of synthetic sapphire

( single crystal alumina ) . Synthetic sapphire ( single crystal alumina ) may be used in decorative applications ( such as jewelry , sheet glass , etc. ) , industrial materials and the semiconductor substrate such as windows , dedicated to the LED sapphire substrates require special orientation and low dislocation density, etc. Therefore, synthetic sapphire belongs to the high-end products.

LED sapphire

The first low fabricating a gallium nitride liner (GaN) -based epitaxial wafer , this process mainly in the metal organic chemical vapor deposition epitaxy furnace complete. Ready to produce GaN-based epitaxial wafer and a variety of source materials required purity of the gases , follow the step by step process requirements of the wafer can be done. The substrates used are sapphire, silicon carbide and silicon substrate , as well as GaAs, AlN, ZnO and other materials. MOCVD is the use of gaseous reactants ( precursors ) and the organometallic group Ⅲ and Ⅴ family reaction of NH3 on the surface of the substrate , the desired product is deposited on the substrate surface. By controlling the temperature, pressure, reactant concentrations and type of scale , thereby controlling the coating composition , the crystal quality of the same . MOCVD epitaxial furnace production of LED epitaxial wafers is the most commonly used devices. Next is a LED PN junction of the two electrodes for processing , the electrode processing is the key process of production of LED chips , including washing , evaporation , yellow, chemical etching , fusing , grinding ; then dicing the LED MAO , tested and sorting , you can get the desired LED chips. If the wafer cleaning is not clean enough , evaporation system is not normal , it will lead to deposition of the metal layer ( refer etched electrode ) will fall off, the appearance of discolored metal layer , gold foam and other abnormalities. Deposition process is sometimes required collet fixing chips, it will produce clamp marks ( in addition to visual inspection must pick ) . Yellow operations include baking, the photoresist , photographic exposure, development , etc., if the developer does not have holes in the mask will be full and luminous area residues more metals. Wafer manufacturing process in the preceding paragraph , the system Cheng Ruqing wash , evaporation , yellow, chemical etching , fusing , grinding and other operations must use the forceps and baskets , vehicles and so on, so there will be grain electrode scratching things from happening .

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What Is The Sapphire

sapphire crystal plane diagram

Sapphire Details

The composition of aluminum oxide sapphire (Al2O3), is composed of three aluminum atoms and two oxygen atoms covalently type combination , the crystal structure of hexagonal lattice structure which is often used for the cut surface with A-Plane, C-Plane and R-Plane. sapphire optical penetration as a wide band , from the near-ultraviolet light (190nm) to the infrared have good light transmission. therefore been widely used in optical components, infrared devices , high strength laser lens material and the mask material , it has a high acoustic velocity , temperature, corrosion resistance , high hardness , high light resistance, high melting point (2045 ℃) , etc., it is a very difficult to process materials , it is often used as the material of the photovoltaic element . Currently high brightness white / blue LED depends on the quality GaN epitaxy (GaN) material quality , and the quality of the epitaxial GaN and sapphire substrate used is closely related to the quality of surface finish , sapphire ( single crystal Al2O3) C surface and Ⅲ - Ⅴ and Ⅱ - Ⅵ family deposited film lattice constant mismatch between the rate is small , consistent with the high-temperature GaN epitaxial process requirements , such as the sapphire wafer produced white / blue / green LED of the key materials .

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Sapphire Tungsten Crucible Process

Tungsten is a metal crucible tungsten products, mainly divided into sintering

tungsten crucible

(applied to the powder metallurgy technique), metal forming, spinning type.Turning the use of tungsten rod shape (usually relatively small size), forming a variety of welding, using pure tungsten plate, tungsten sheet and pure tungsten rod through the appropriate processing technology. Tungsten crucible at 2600 degrees below the inert gas used in a vacuum.

Melting point of tungsten high boiling point, high temperature strength, wear resistance, corrosion, thermal conductivity, thermal expansion coefficient, good hardenability. Tungsten crucible smelting of rare earth is widely used, quartz glass, electronic spraying, crystal growth,etc.

Tungsten melting point, boiling point, high temperature strength, anti-friction, corrosion resistance, thermal conductivity, thermal expansion coefficient, good hardenability, thanks to such excellent properties, tungsten is widely used in rare earth smelting crucible, quartz glass, e-coat , crystal growth and other industries.

Production Process: Molybdenum Powder-Sifted-Combined Batch-Isostatic Pressing-Rough Blanks Lathe-IF Sintering-Boutique Vehicle Processing-Packaging

Product Details I. Physical and chemical properties:

1.Purity: W ≥ 99.95%;
2.Density:≥ 19.25g/cm3;
3.The Maximum Application Temperatures: 2400 ℃.

Sapphire Molybdenum Crucible Process

molybdenum crucible

Molybdenum physical and chemical properties:

1.Purity:pure molybdenum plate Mo ≥ 99.95%, high temperature molybdenum plate Mo ≥ 99% (adding rare earth elements)
2.Density: ≥ 10.1g/cm3
3.Flatness: ≤ 3%

Production Process:

Molybdenum blank(raw)-Inspection-Hot-School Level And Annealing-Caustic-Semi-Finished Products Inspection-Temperature Tie-Vacuum Annealing-Test-Cold-Leveling-Cut Vacuum Annealing-Inspection-Packaging

Purpose:

After the deformation of more than 60% after the rolling process, the density of molybdenum Mo substantially close to theoretical density, so it has high strength and excellent internal homogeneous high temperature creep properties, which are widely used in the production sapphire crystal growth furnace reflective screen, cover, reflective screen in the vacuum furnace, hair tropical, connectors, and other sputtering target for ion plating, and other products boat temperature.

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Sapphire Crystal Growth Furnace Process

sapphire crystal growth furnace

(1)Sapphire Introduction

Also known as α-Al2O3 single crystal sapphire , commonly known as corundum , is a simple ligand type oxide crystals. Sapphire crystal has excellent optical properties, mechanical properties and chemical stability , high strength, hardness, resistance to erosion, close to 2000 ℃ high temperature in the harsh conditions of work , which is widely used in military infrared devices , satellite space technology , high-intensity laser window material. Its unique lattice structure , excellent mechanical properties, good thermal properties make sapphire crystal as the practical application of semiconductor GaN/Al2O3 light-emitting diode (LED), LSI SOI and SOS and nanostructured superconducting films such as the most ideal substrate material . Low-cost, high-quality large-size sapphire single crystal growth has become an urgent task facing .

Sapphire Dan Changjing Furnace

Sapphire crystal growth method can be divided into solution growth , melt growth , the growth of three kinds of gas , which has a melt growth method due to fast growth rate , high purity and crystal integrity and good features, but is preparing to become a large size and a specific shape crystal the most common way of crystal growth . Currently available to melt growth method to artificial sapphire crystal growth methods include melting flame method , Czochralski method , zone melting method , the crucible moving method, heat exchange, the temperature gradient and Kyropoulos law. However, these methods have their own shortcomings and limitations , is more difficult to meet the future large-size sapphire crystal , high-quality, low-cost development needs. For example, the melting flame method , Czochralski method , zone melting crystal growth methods such as quality and size are limited , it is difficult to meet the performance requirements of optical devices ; heat exchange method, temperature gradient and Kyropoulos grown sapphire and other methods large crystal size , better quality , but requires a lot of heat exchange of helium as a coolant , the temperature gradient method, the foam raw sapphire crystal ingot grown by a high temperature annealing required , subsequent processing of the blank process more complicated and costly .

(2)Micro-Pulling Rotation Kyropoulos Prepared Sapphire Crystal Craft

Micro- pulling rotation Kyropoulos prepared on sapphire crystal method Kyropoulos and improved Czochralski method developed on the basis for the growth of large-size sapphire crystal method , mainly in Ukraine Donets produced Ikal-220 crystal growth furnace based on the improvement and development. Crystal growth system mainly comprises a control system, vacuum system , heating element , cooling systems and thermal protection systems. Micro- pulling rotation Kyropoulos large sapphire crystal growth technology mainly through the regulation of heat transport within the system to control the entire crystal growth process, so the heating body and the thermal protection system design, the choice of the working fluid heat exchanger , heat ability to design, crystal growth rate , cooling rate and other process control problems of high quality can grow sapphire crystals are essential.

Micro- pulling rotation Kyropoulos prepared sapphire crystal growth equipment catchment , electricity and gas in one , mainly by the energy supply and control system , transmission system , the crystal growth chamber , vacuum system , cooling system and other ancillary equipment and other components. Transmission as a seed rod ( heat exchanger) pulling and rotating movement of the guide and drive mechanism is connected with the column top of the furnace tube , the main by the seed rod ( heat exchanger) for lifting , rotating device component. Pulling gear from the seed rod ( heat exchanger ) of fast and slow lift system composed of two parts . Seed rod ( heat exchanger ) system consists of a slow lifting magnet DC torque motor , precision ball screw through harmonic reducer and connected by rolling linear guide rail , drag the slider to achieve seed rod ( heat exchange device ) in the slow process of pulling down movement . Seed rod ( heat exchanger ) quick lift system by the fast servo motor via a worm on a harmonic reducer , worm gear and harmonic linkage implementation. Seed rod rotary motion by a rare earth permanent magnet servo motor through the wedge belt drive implementation. The drive has a high positioning accuracy , load capacity , speed, stable, reliable, no vibration, no crawling and so on. Precision heating , which is simple to operate , easy to control characteristics. In the thermal protection system, the design is capable of regulating the atmosphere insulation cover , radiation resistance, thermal insulation layer of small thermal conductivity , thermal stability, long-term work not the dregs , can not afford leather , with a pair of crystal growth of environmental pollution small , easy to clean and so on. Optional molybdenum crucible and crystal growth according to the design dimensions , the design quality of the inner diameter of the crucible , the net depth , thickness and other geometric dimensions , each furnace can be prepared maximum D200mmX200mm, 25Kg weight sapphire single crystal . Al2O3 raw purity of raw materials used in crystal growth 5N high purity alumina powder prepared by flame or melt broken sapphire crystal .

Crystallization from the melt synthetic gemstones is the basic process : raw material powder melting → ​​cooling → ​​heating → ​​→ → exceeds the critical undercooling crystallization .

99.99% purity alumina powder is added an organic binder , the green body is formed in the press ; first state of the body previously fired alumina semi block burn into the furnace , the furnace was evacuated exhaust impurity gas , has started mechanical pump , diffusion pump , vacuum to 10 ↑ [-3] -10 ↑ [-4] Pa, when the furnace temperature of 1500-1800 ℃ filled with protective gas mixture , continue to heat up to the set temperature (2100 - 2250 ℃); (3) furnace temperature reached the set temperature , the heat 4-8 hours , adjust the position of the furnace temperature and the crucible and the seed crystal at the top of the raw material melt to achieve inoculation growth , the temperature gradient of the solid-liquid interface is set at 10 - 50 ℃ / cm, until the end of the crystal growth , in-situ annealed.

Tungsten And Molybdenum Sapphire Growth Furnace Process

sapphire furnace overall drawing

Manufacture of crucibles information should high refractoriness, Duan Lian crucible is used, and should have a strong temperature coefficient. There crucible data have sufficient strength, in the smelting process of the impact of the high temperature, there will be wear, and therefore higher raw material strength.

Meanwhile contraction coefficient, can accept to rapid temperature changes without deformation and rupture, as well as in the selection of the molten metal to watch with no chemical reaction, at the time when demand for high-temperature metal smelting crucible selection should ensure chemical stability at high temperatures to learn.

Thus crucible need to pay attention in the selection of a lot of useful use different data. For example: melting aluminum and aluminum alloys to use silicon carbide crucible. Since the density of tungsten and molybdenum, high temperature capability, so with tungsten, molybdenum processing as sapphire growth furnace is an ideal fit.

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Single Crystal Furnace with Molybdenum Seed Chuck

Pulling The Seed Crystal

Seed is the seed of crystal growth, also called the seed crystal.With different crystal seed to make the seed will get a different crystal orientation of the single crystal.

Product Features

Taken from the middle of the crystal dislocation,no damage,no stress parts, drawing parts and tail have enough distance,and no cutting damage.No scars, no cracks.

Round Seed Specifications

molybdenum seed crystal chuck

Diameter length
φ12.5mm 140-150mm
φ13.5mm 140-150mm
φ17.5mm 140-150mm

Fang Seed Specifications

Section length
10mm * 10mm 100-120mm
12mm * 12mm 100-120mm
14mm * 14mm 100-120mm

Technical Specifications Model P / N

Resistivity 1-6 Ω.CM Crystal orientation
Orientation deviation <15
Carbon content <1PPMA

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Molybdenum Orifice Furnace with Sapphire Dan Changjing

molybdenum stream mouth

Image Type:Molybdenum Orifice
Details: Mo content:≥ 99.9%
Density:≥ 9.5g/cm3
Size: (120-200) mm × (250-300) mm
Tolerance:±0.5mm

Uses: mainly used for glass fibers, refractory ceramic fiber, building materials, and other industrial sapphire growth furnace for melting the feed opening. This product uses the molybdenum powder raw materials made FMo-1

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Molybdenum Furnace Head with Sapphire Dan Changjing

molybdenum mandrels

Molybdenum alloy head using molybdenum powder FMo-1 adding rare earth raw materials, through mixing, molding, contouring, high-temperature sintering processing into finished products density ≥ 9.4g/cm3.

Product specifications diameter: Φ20-300mm, and according to your drawings for special processing production.

Mainly used for stainless steel, drill steel, bearing steel and high-temperature alloy steel seamless steel perforated work, no kind of material used in high temperature harsh environments seamless hot-rolled perforated work

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Molybdenum Hook And Sapphire Growth Furnace

molybdenum hook

Molybdenum feet

Variety: Straight, pointed, round. Hit flat

Uses: useful in a variety of bulb holder, light feet, tungsten, bromine tungsten lamp, auto lamp H series, halogen tube, sapphire growth furnace parts, etc.

Molybdenum hook

Varieties: single hook, double hook, playing flat

Purpose: practical in mercury lamp, metal halide lamp, dysprosium lamp, sapphire growth furnace parts, etc.

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Sapphire Dan Changjing Molybdenum Heater And Furnace

Product's physical and chemical properties

molybdenum rod heating element

1.The molybdenum rod heating element
1.1 Purity: W ≥ 99.95%;
1.2 Density: ≥ 19.3g/cm3;
1.3 Application temperatures: ≤ 2600 ℃;

2.Copper base
2.1 Purity: Cu ≥ 99.95%;
2.2 Density: ≥ 8.8%;
2.3 Application temperatures: ≤ 1000 ℃;

Molybdenum heater block assembly as sapphire crystal growth furnace heat, molybdenum crucible melt to form Al2O3 turbulence, resulting in a radial temperature gradient has a decisive role. Therefore, a high-purity, high-density, well-made, well-designed molybdenum heater block assembly for sapphire crystal quality control, energy conservation, and life is important.

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Molybdenum Electrode Screen And Sapphire Dan Changjing Furnace Hot Zone

The company produces electrode screen series covering the current Kyropoulos

molybdenum electrode screen

usual 30 kg, 60 kg, 85 kg, 120 kg crystal weight class.

Our many years of production integrated molybdenum electrode, molybdenum plate, 'molybdenum rod, molybdenum wire, molybdenum crucible, molybdenum rod, molybdenum round, as well as machining experience and technical advantages for the production of thermal field sapphire dan changjing furnace provides a number of products and components technical support.

Screen for the production of molybdenum electrodes sapphire crystal growth furnace hot zone and supporting the crucible with a high density, high purity, high precision machining.

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Molybdenum Furnace And Sapphire Dan Changjing

This product uses the vertical furnace, vacuum or protective atmosphere at high

sapphire dan changjing

temperature under conditions of decreased type crystal growth, for 2-inch sapphire single crystal growth, the substrate for an LED.

Technical Parameters
1 Power: 40KW
2 Power supply voltage: 380V 50HZ
3 Maximum temperature: 2200 ℃
4 Ultimate vacuum: 6 * 10-3Pa
5 Crucible size: Ф80 × 120mm
6 Temperature measurement system: Thermocouple + color infrared analyzer
7 Pressure rise rate: 2Pa / hour
8 Crucible displacement speed: Slow 0.2-5mm / hour, fast 120mm / min
9 The crucible maximum displacement: 200mm
10The furnace inflation pressure: ≤ 0.06Mpa
11Atmosphere control: realize the set automatically within the furnace pressure control

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Crystal Growth Furnace Thermal Field with Molybdenum

crystal growth furnace thermal field in molybdenum

Product physical and chemical properties:
1.Purity: Mo ≥ 99.95% or W ≥ 99.95%;
2.Density: Mo ≥ 10.1g/cm3 material or tungsten material ≥ 19.1g/cm3;
3.The application temperature environments: ≤ 2400 ℃;

As sapphire growth furnace insulation components,molybdenum reflective screen and bottom plate is the most critical role in the furnace heat barrier and reflective, high purity,size,accuracy,smooth surface,easy assembly,the rational design of insulation components to improve the quality of the sapphire crystal pulling has very important significance.

If you have any questions about Sapphire tungsten and molybdenum furnace problems and needs related to the trouble to keep in touch with us.
E-mail: sales@chinatungsten.com
Phone: +86 5925129696
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Molybdenum Heat Shield And Crystal Growth Furnace

molybdenum heat shield

Our company has long engaged in the research, development and production of

In recent years, with the rapid development of LED industry, the company has increased the corresponding Sapphire Dan Changjing furnace product development and production, but also for the corresponding production equipment for the large-scale investment from large isostatic presses,the next intermediate sintering furnace to finishing packing large lathes.Heat shield riveted molybdenum,molybdenum wire,molybdenum sets of rods connected and fixed.

If you have any questions about Sapphire tungsten and molybdenum furnace problems and needs related to the trouble to keep in touch with us.

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Molybdenum Boat and Sapphire Dan Changjing

molybdenum boat

Molybdenum boat is made ​​of high temperature rolling molybdenum plate with high

Molybdenum boat used for high temperature smelting industries, such as Sapphire Dan Changjing so on.

If you have any questions about Sapphire tungsten and molybdenum furnace problems and needs related to the trouble to keep in touch with us.
E-mail:sales@chinatungsten.com
Phone: +86 5925129696
Fax: +86 5925129797
strength, excellent high temperature properties. It is orderly, clean and good soldering profiles to ensure there is a boat in the high-stress conditions the optimum temperature and lifetime.

Molybdenum Crucible Furnace with Sapphire Crystal

molybdenum crucible

Currently used sapphire crucible furnace iridium crucible ,crucible molybdenum crucible.From a practical point of view,iridium crucible minimal contamination of sapphire,but the price is too expensive,the cost is high ; while tungsten and molybdenum crucible crucible relatively cheaper,but contamination is relatively large.

Using iridium crucible generally iridium crucible itself is the heat generator, but using tungsten,molybdenum crucible is less used crucible itself do heat. Ikal-200 type crystal growth furnace,using molybdenum crucible,molybdenum heat shield,tungsten heating body,volatile at high temperatures molybdenum and tungsten atoms.Of course,tungsten,molybdenum crucible itself is not doing no heating element,is relative,process selection and temperature field settings are very critical factor.Different crystal growth method using the crucible will be different, such as the Kyropoulos (KY) Average of tungsten crucible , heat exchange method (HEM) generally used molybdenum crucible,because the heat exchange last to fall through to take a single crystal,and the molybdenum crucible cheapest price . According crucible manufacturing process, can be divided into pressed and sintered crucible and the crucible spinning,pressed and sintered crucible of lower quality,purity,low density,relatively short life,the price is relatively cheap;spinning crucible of higher quality, purity ,density higher , longer service life , high price.Domestic crystal growth furnace is generally used to suppress sintering crucible .

If you have any questions about Sapphire tungsten and molybdenum furnace problems and needs related to the trouble to keep in touch with us .
E-mail : sales@chinatungsten.com
Phone: +86 5925129696
Fax: +86 5925129797
tungsten,