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| sapphire crystal plane diagram |
The composition of aluminum oxide sapphire (Al2O3), is composed of three aluminum atoms and two oxygen atoms covalently type combination , the crystal structure of hexagonal lattice structure which is often used for the cut surface with A-Plane, C-Plane and R-Plane. sapphire optical penetration as a wide band , from the near-ultraviolet light (190nm) to the infrared have good light transmission. therefore been widely used in optical components, infrared devices , high strength laser lens material and the mask material , it has a high acoustic velocity , temperature, corrosion resistance , high hardness , high light resistance, high melting point (2045 ℃) , etc., it is a very difficult to process materials , it is often used as the material of the photovoltaic element . Currently high brightness white / blue LED depends on the quality GaN epitaxy (GaN) material quality , and the quality of the epitaxial GaN and sapphire substrate used is closely related to the quality of surface finish , sapphire ( single crystal Al2O3) C surface and Ⅲ - Ⅴ and Ⅱ - Ⅵ family deposited film lattice constant mismatch between the rate is small , consistent with the high-temperature GaN epitaxial process requirements , such as the sapphire wafer produced white / blue / green LED of the key materials .
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