Sapphire Crystal Growth Furnace Process

sapphire crystal growth furnace

(1)Sapphire Introduction

Also known as α-Al2O3 single crystal sapphire , commonly known as corundum , is a simple ligand type oxide crystals. Sapphire crystal has excellent optical properties, mechanical properties and chemical stability , high strength, hardness, resistance to erosion, close to 2000 ℃ high temperature in the harsh conditions of work , which is widely used in military infrared devices , satellite space technology , high-intensity laser window material. Its unique lattice structure , excellent mechanical properties, good thermal properties make sapphire crystal as the practical application of semiconductor GaN/Al2O3 light-emitting diode (LED), LSI SOI and SOS and nanostructured superconducting films such as the most ideal substrate material . Low-cost, high-quality large-size sapphire single crystal growth has become an urgent task facing .

Sapphire Dan Changjing Furnace

Sapphire crystal growth method can be divided into solution growth , melt growth , the growth of three kinds of gas , which has a melt growth method due to fast growth rate , high purity and crystal integrity and good features, but is preparing to become a large size and a specific shape crystal the most common way of crystal growth . Currently available to melt growth method to artificial sapphire crystal growth methods include melting flame method , Czochralski method , zone melting method , the crucible moving method, heat exchange, the temperature gradient and Kyropoulos law. However, these methods have their own shortcomings and limitations , is more difficult to meet the future large-size sapphire crystal , high-quality, low-cost development needs. For example, the melting flame method , Czochralski method , zone melting crystal growth methods such as quality and size are limited , it is difficult to meet the performance requirements of optical devices ; heat exchange method, temperature gradient and Kyropoulos grown sapphire and other methods large crystal size , better quality , but requires a lot of heat exchange of helium as a coolant , the temperature gradient method, the foam raw sapphire crystal ingot grown by a high temperature annealing required , subsequent processing of the blank process more complicated and costly .

(2)Micro-Pulling Rotation Kyropoulos Prepared Sapphire Crystal Craft

Micro- pulling rotation Kyropoulos prepared on sapphire crystal method Kyropoulos and improved Czochralski method developed on the basis for the growth of large-size sapphire crystal method , mainly in Ukraine Donets produced Ikal-220 crystal growth furnace based on the improvement and development. Crystal growth system mainly comprises a control system, vacuum system , heating element , cooling systems and thermal protection systems. Micro- pulling rotation Kyropoulos large sapphire crystal growth technology mainly through the regulation of heat transport within the system to control the entire crystal growth process, so the heating body and the thermal protection system design, the choice of the working fluid heat exchanger , heat ability to design, crystal growth rate , cooling rate and other process control problems of high quality can grow sapphire crystals are essential.

Micro- pulling rotation Kyropoulos prepared sapphire crystal growth equipment catchment , electricity and gas in one , mainly by the energy supply and control system , transmission system , the crystal growth chamber , vacuum system , cooling system and other ancillary equipment and other components. Transmission as a seed rod ( heat exchanger) pulling and rotating movement of the guide and drive mechanism is connected with the column top of the furnace tube , the main by the seed rod ( heat exchanger) for lifting , rotating device component. Pulling gear from the seed rod ( heat exchanger ) of fast and slow lift system composed of two parts . Seed rod ( heat exchanger ) system consists of a slow lifting magnet DC torque motor , precision ball screw through harmonic reducer and connected by rolling linear guide rail , drag the slider to achieve seed rod ( heat exchange device ) in the slow process of pulling down movement . Seed rod ( heat exchanger ) quick lift system by the fast servo motor via a worm on a harmonic reducer , worm gear and harmonic linkage implementation. Seed rod rotary motion by a rare earth permanent magnet servo motor through the wedge belt drive implementation. The drive has a high positioning accuracy , load capacity , speed, stable, reliable, no vibration, no crawling and so on. Precision heating , which is simple to operate , easy to control characteristics. In the thermal protection system, the design is capable of regulating the atmosphere insulation cover , radiation resistance, thermal insulation layer of small thermal conductivity , thermal stability, long-term work not the dregs , can not afford leather , with a pair of crystal growth of environmental pollution small , easy to clean and so on. Optional molybdenum crucible and crystal growth according to the design dimensions , the design quality of the inner diameter of the crucible , the net depth , thickness and other geometric dimensions , each furnace can be prepared maximum D200mmX200mm, 25Kg weight sapphire single crystal . Al2O3 raw purity of raw materials used in crystal growth 5N high purity alumina powder prepared by flame or melt broken sapphire crystal .

Crystallization from the melt synthetic gemstones is the basic process : raw material powder melting → ​​cooling → ​​heating → ​​→ → exceeds the critical undercooling crystallization .

99.99% purity alumina powder is added an organic binder , the green body is formed in the press ; first state of the body previously fired alumina semi block burn into the furnace , the furnace was evacuated exhaust impurity gas , has started mechanical pump , diffusion pump , vacuum to 10 ↑ [-3] -10 ↑ [-4] Pa, when the furnace temperature of 1500-1800 ℃ filled with protective gas mixture , continue to heat up to the set temperature (2100 - 2250 ℃); (3) furnace temperature reached the set temperature , the heat 4-8 hours , adjust the position of the furnace temperature and the crucible and the seed crystal at the top of the raw material melt to achieve inoculation growth , the temperature gradient of the solid-liquid interface is set at 10 - 50 ℃ / cm, until the end of the crystal growth , in-situ annealed.

Molybdenum Electrode Screen And Sapphire Dan Changjing Furnace Hot Zone

The company produces electrode screen series covering the current Kyropoulos

molybdenum electrode screen

usual 30 kg, 60 kg, 85 kg, 120 kg crystal weight class.

Our many years of production integrated molybdenum electrode, molybdenum plate, 'molybdenum rod, molybdenum wire, molybdenum crucible, molybdenum rod, molybdenum round, as well as machining experience and technical advantages for the production of thermal field sapphire dan changjing furnace provides a number of products and components technical support.

Screen for the production of molybdenum electrodes sapphire crystal growth furnace hot zone and supporting the crucible with a high density, high purity, high precision machining.

Please feel free to sales@chinatungsten.com or by e-mail Phone: 865925129696 Contact us. Thank you for your interest in our products, if necessary, we will be happy to serve you.

Tungsten and Molybdenum for Sapphire Growth Furnace

Products made of tungsten and molybdenum are the main material for sapphire growth furnace. The products of tungsten and molybdenum are made of the material of tungsten and molybdenum whose purity are over 99.95%. They include tungsten crucible, tungsten plate, tungsten sheet, tungsten wire, tungsten electrode screen and molybdenum crucible, molybdenum plate, molybdneum sheet, molybdenum heater, molybdenum holder and molybdenum electrode screen. Besides the pure tungsten and molybdenum products, tungsten rhenium wire is also a main product for the application of sapphire growth furnace.

The color of tungsten and molybdenum for sapphire growth furnace are grey. Tungsten is widly used as parts of sapphire growth furnace for its unique properties, such as high density, small volume, excellent hardness, superior wearing resistance, high ultimate tensile strength, high ductility, high temperature resistance, high radiation adsorption capability, etc. Molybdenum products also have similar properties, such as high denshity and high melting point.

Sapphire growth furnace is a production proven system that produces high quality boules of exceptional crystal for the industry of LED. This furnace has been a increasing demand system for the high volume sapphire producers. One of the main reason is the fast increasing requirement of LED. In the system of sapphire growth furnace, tungsten and molybdenum products are the most choice for the sapphire growth, or crystal growth.

Tungsten and molybdenum for sapphire growth furnace composed lots of parts. Tungsten products for sapphire growth furnace includes tungsten crucible, tungsten crucible cover, tungsten bracket, tungsten heat shield, tungsten electrode screen, tungsten heater, tungsten wire heater and tungsten rhenium. As for molybdenum products for sapphire growth furnace, they consists of molybdenum cover, molybdenum barrel screen, molybdenum crucible, molybdenum boat, molybdenum heat shield, molybdenum bracket, molybdenum thermal field, molybdenum heating furnace, molybdenum hook, molybdenum mandrel, molybdenum stream mouth and molybdenum seed chunk. These mentioned products are parts of sapphire growth furnace. There are some other designed tungsten and molybdenum for sapphire growth furnace provided by Chinatungsten Online.

Tungsten crucible and molybdenum crucible are main products for sapphire growth. Tungsten and molybdenum crucible are used as heating element in the process of sapphire crystal growth. For the property of high melting point of tungsten crucible and molybdenum crucible, tungsten and molybdenum are better choice for the sapphire growth for they will not melt with the crystal and can assure the prurity and high quality of the crystal, which can be produced high qualtiy LED material.

The best manufacturing technique of tungsten and molybdneum products are sintering ones for they own the property of high quality and reasonable price.

The sapphire is one of the three gem-varieties of corundum, the other two being ruby -- defined as corundum in a shade of red—and padparadscha—a pinkish orange variety. Although blue is their most well-known color, sapphires may also be colorless, and are found in many colors including shades of gray and black.

molybdenum crucible

The cost of natural sapphires varies depending on their color, clarity, size, cut, and overall quality – as well as their geographic origin. Significant sapphire deposits are found in Eastern Australia, Thailand, Sri Lanka, Madagascar, East Africa, and in North America in a few locations, mostly in Montana.Sapphire and rubies are often found together in the same area, but one gem is usually more abundant. Color in gemstones breaks down into three components: hue, saturation, and tone. Hue is most commonly understood as the "color" of the gemstone. Saturation refers to the vividness or brightness or "colorfulness" of the color, and tone is the lightness to darkness of the color. Blue sapphire exists in various mixtures of its primary (blue) and secondary hues, various tonal levels (shades) and at various levels of saturation (vividness).

Using tungsten and molybdenum products to produce sapphire is called prefabricated mehod, and this method can also produce high qualtiy sapphire, but also cost effecticve.

If there is any other question refer to tungsten and molybdenum for sapphire growth furnace, please feel free to contact us through the following methods.

Email: sales@chinatungsten.com
Tel.: +86 592 512 9696/ +86 5925129595
Fax: +86 5925129797

Molybdenum Barrel Stove Screen and Sapphire Dan Changjing

Molybdenum barrel screen, is a molybdenum heat shield, because riveted into the barrel of the name. Our company has long engaged in the research, development and production of industrial furnaces with a full set of equipment, including molybdenum wire heating element, molybdenum heat shield carrier molybdenum crucibles and thermal field supporting parts, with a powder-pressure, sintering, forging, rolling to the deep finish a full set of production and processing equipment, and skilled production process.

molybdenum-barrel-screen-sapphire-growing-furnace

In recent years, with the rapid development of LED industry, the company has increased the corresponding Sapphire Dan Changjing furnace product development and production, but also for the corresponding production equipment for the large-scale investment from large isostatic presses , the next intermediate sintering furnace to finishing packing large lathes.

Heat shield riveted molybdenum, molybdenum wire, molybdenum sets of rods connected and fixed.

Sapphire Dan Changjing Furnace Tungsten And Molybdenum Products

Pure tungsten and molybdenum products as an important material for sapphire growth furnace. Sapphire Dan Changjing furnace tungsten and molybdenum products mainly purity higher than 99.95% of tungsten and molybdenum raw materials from the production of products, including tungsten crucible, tungsten plate, tungsten sheet, tungsten wire, tungsten electrode screen, tungsten and tungsten cylinder compartment heat shields and molybdenum crucible, molybdenum heat shield, molybdenum heating element, molybdenum thermal field, molybdenum and molybdenum electrode support frame screens. In addition to tungsten and molybdenum products, the tungsten-rhenium wire is sapphire furnace required a product.

Sapphire Furnace tungsten products are steel gray to tin white hard metal, very pure tungsten can see-saw sawing (pure tungsten is very brittle and difficult to process). Tungsten processing means are forging, tensile and impact. In all the highest melting point of tungsten metal for 3415 ℃, the lowest vapor pressure at the highest tensile strength (1650 ℃ when). Corrosion performance is very good, most of the erosion of its small inorganic acids. In the air to form a protective surface oxide, but will be completely oxidized at high temperature. Molybdenum product is high temperature, high melting point refractory metal.

Sapphire growth furnace designed to nurture through Kyropoulos sapphire single crystal . This method is the tungsten crucible by the raw materials ( alumina ) was heated to its melting point of 2050 ° C or more, and then gradually reduce the melting temperature and allowed to crystallize into a specific granules . The growing furnace in a heat-insulating casing with a special lid closed and the heater constructed in crystallizer . Therefore appeared Sapphire tungsten and molybdenum products Dan Changjing furnace .

Crystal growth furnace is an important carrier of tungsten and molybdenum crucible . Using iridium crucible generally iridium crucible itself is the heat generator , but using tungsten, molybdenum crucible is less used crucible itself do heat . Ikal-200 type crystal growth furnace , tungsten crucible , molybdenum crucible , molybdenum heat shield , tungsten heating body , volatilized at high temperatures molybdenum and tungsten atoms. Of course, tungsten , molybdenum crucible itself is not doing no heating element , is relative , process selection and temperature field settings are very critical factor . Different crystal growth method using the crucible will be different, such as the Kyropoulos (KY) Average of tungsten crucible , heat exchange method (HEM) generally used molybdenum crucible , because the heat exchange last to fall through to take a single crystal , and the molybdenum crucible cheapest price . According crucible manufacturing process, can be divided into pressed and sintered crucible and the crucible spinning , pressed and sintered crucible of lower quality , purity, low density , relatively short life , the price is relatively cheap ; spinning crucible of higher quality, purity , density higher , longer service life , high price. Domestic crystal growth furnace is generally used to suppress sintering crucible .

tungsten and molybdenum for sapphire growth furnace

The chemical composition of the sapphire crystal alumina (α-Al2O3), is composed of three aluminum atoms and two oxygen atoms covalently type combination , the crystal structure of hexagonal crystal structure , as 2,3,4 shown . In terms of color , pure alumina is rendered transparent and colorless crystals , because of different color element ion penetration in the growing sapphire , thereby sapphire show different colors. In nature, when grown as sapphire crystal containing titanium ions (Ti3 +) and iron ions (Fe3 +) , makes the crystals appear blue , and become blue sapphire (Sapphire). When a crystal containing chromium ion (Cr3 +) , makes the crystal appear red, and a ruby (Ruby). And when the crystal containing nickel ions (Ni3 +) , the cause is yellow crystals , which become yellow sapphire . Table 1 lists the characteristics of sapphire table . For growing sapphire sapphire crystal growth furnace is affecting the quality of the key.

Tungsten and molybdenum products are suitable Sapphire Dan Changjing key carrier. Using tungsten and molybdenum as a material , can effectively protect the purity sapphire as tungsten and molybdenum are high temperature refractory metal , not react with sapphires .

Sapphire Overcapacity

October 2012,Nanjing High Accurate Drive Equipment Manufacturing Group Co., high-brightness LED sapphire substrate project groundbreaking . Project a fixed asset investment of 10 billion yuan, the construction scale of not less than 160 Taiwan Sapphire Dan Changjing furnace, within two years of production.

Optical crystal (SZ.002273) report, the company at the end of 2010 the project started to invest in LED sapphire substrate , the current form sapphire flat monthly production capacity of 200,000 pieces , sapphire PSS monthly production capacity of 50,000 scale.

Sanan Optoelectronics Crystal Ann 's Optical Co., Ltd. , Fujian Anxi County in the construction of industrial projects LED sapphire substrate , recently also started mass production . Projects a total investment of 2.538 billion yuan , the construction period of three years, the project introduces crystal growth furnace 410 Taiwan ( sets ) and other related process equipment, designed annual production capacity of sapphire substrate 12 million.

Sapphire Dan Changjing furnace

Founded in November 2010 in Guizhou Haotian Optoelectronics is planning to fully completed by the end of 2014 , after the completion of an annual output of 30 million LED sapphire substrate material scale.

And just this month , another listed company Tiantonggufen (SH.600330) passed the " on the company to target specific non -public offering plan of the motion ," the company intends to invest an annual fund-raising through the issuance of 1,150,000 4 inches LED sapphire substrate material technology projects and supplement working capital.

GLII statistics show that only 2011 new LED sapphire substrate Dan Changjing and the number of projects reached 26 , as of the end of the third quarter of 2012 the number of new projects is 14 . Currently under construction Sapphire Dan Changjing project about two inches capacity sapphire substrate 100 million years , and the current actual market demand is just over 1000 million. Some of the epitaxial enterprises in the use of imported products , so the domestic severe overcapacity sapphire substrate.

"Now the sapphire substrate serious excess capacity , the price is low , many companies have slowed down the progress of investment expansion , direct impact on the sales of crystal growth furnace ." When asked about last year's sales situation, the crystal growth furnace company official said.

"Customer sign a long single more, supply and demand situation has improved ." Tiantonggufen Marketing Director Guoyue Bo said that , since opening orders improved, the amount of customer orders plus trend. The next three months sales and prices are on the rise . Insiders said that the downturn in the sapphire substrate prices are now so many companies lose money , are hoping this year epitaxial wafer fab capacity utilization can be improved, driven by a sapphire substrate sales and prices rise. But this year a good start can be maintained long , is a known issue.

Domestic Price To Fight Sapphire Dan Changjing Furnace Volume, Boom Shall Support Downstream

Domestic Price To Fight Sapphire Dan Changjing Furnace Volume, Boom Shall Support Downstream

According to Engineering LED Industry Institute (GLII) statistics show that despite the current low price of the sapphire substrate is in the domestic investment projects sapphire dan changjing expansion boom is beginning to become more rational , but crystal growth furnace equipment investment enthusiasm seems seem not to cool down. Only in the past in 2011, there are more than ten domestic businesses to invest in developing crystal growth furnace equipment , some of which have already received orders manufacturers is mass production.

Recently,the Taiwan subsidiary of Taiwan sapphire dan changjing manufacturers ACME poly-called photoelectric successfully developed the largest in Asia , 120 kg class sapphire dan changjing furnaces. Company official said that the magnitude of the crystal growth furnace can significantly reduce production costs, and is suitable for 6 inches above the ingot production.

And just two weeks ago , Jiangsu Shuangliang Group Ltd. said the company introduced sapphire dan changjing Ukraine Lancey nous furnace technology company , has completed the digestion and absorption , is expected to 85kg sapphire dan changjing furnace after the Spring Festival will be held in 2012 market.

According to Engineering LED reporter, before the market can be used to supply the production of LED sapphire dan changjing furnace , mainly GTAT 100 kg class crystal growth furnace , USA TT's 90 kg class crystal growth furnace , ARC-energy of 30 kg grade crystal growth furnace as well as Russia 's 35 kg class crystal growth furnace.

As previously sapphire crystal rod has appeared worldwide overcapacity alarms , plus domestic sapphire crystal rod maker continues expansion, resulting in two -inch sapphire substrate prices over the past one-year period from a high of 35 dollars plunged below $ 10 .

In comparison,the current market price of the sapphire substrate 4 inches case is obvious, because more than 60 kilograms of crystal growth from the stick and cut out four inches and above the technical difficulty of the substrate is still high , so the price range is limited.

Sapphire Dan Changjing Furnace

Meanwhile,in addition to Europe, America and Taiwan, some manufacturers in mass production 4 inches and above epitaxial wafers , the extension of domestic manufacturers is 2 inches basically still dominated . According to the reporter , now 4 inches sapphire substrate prices still maintain a level of about 50 dollars , taking into account the gradual opening up of large-size manufacturers epitaxial production process,sapphire dan changjing manufacturers also can speed up deployment of large kg class product line.

Sapphire Dan Changjing Furnace Hot Zone

Sapphire Dan Changjing Furnace Hot Zone

Sapphire (Sapphire) is an aluminum oxide (Al2O3) single crystal, the optical penetration with a very wide, from near-ultraviolet light (190nm) to have a mid-infrared

Sapphire has good light transmittance. Sapphire crystal has excellent optical properties, mechanical properties and chemical stability, high strength, hardness, corrosion resistance, high temperature 2000 ℃ in proximity to work under harsh conditions, they have been widely used in military infrared devices, satellite space technology, high-intensity laser window material. Its unique lattice structure, excellent mechanical properties, good thermal properties make sapphire crystal as the practical application of semiconductor GaN/Al2O3 light-emitting diode (LED), LSI SOI and SOS and nanostructured superconducting films such as the most ideal substrate material. With the recent LED TV, LED Monitor, LED NB, LED Phone and LED lighting market continues rapid growth, a strong impetus for the production of LED sapphire substrate market demand expansion.

Benefits：

The production technology is mature sapphire substrate, the device of good quality
Sapphire good stability, can be used in high-temperature growth process
Sapphire has high mechanical strength, ease of handling and cleaning

Common Crystal Growth Method:

Czochralski Method (Czochralski crystal pulling method, also called Czochralski method): Pull from the melt.
Kyropoulos Method (Kjeldahl crystal growth method, also known as Kyropoulos): Dip and turn.

Temperature gradient technique (TGT France)

EFG Method (guided mode method, Edge Defined Film-fed Growth): Pull through die.
Heat exchange method (Heat Exchange Method, HEM)

Sapphire Dan Changjing Furnace

Vertical and horizontal temperature gradient cooling method (Vertical Horiaontal Gradient Freezing, VHGF): Korea Sapphire Technology Company (STC) technology.
ES2-GSA crystal growth method: American Rubicon Technology Inc. Technologies.
Since tungsten and molybdenum has a high temperature, low pollution and other characteristics, are widely used to make sapphire dan changjing furnace hot zone components, including tungsten crucible / molybdenum crucible, heating element, tungsten tube, heat shield, support, base, seed rod , the crucible cover. Heating element cage structure using tungsten or tungsten mesh heating element heating element, help provide uniform and stable temperature field.

TLWM to provide customers with quality 30Kg, 60Kg, 85Kg, 120kg full sapphire dan changjing furnace thermal field and thermal field of tungsten and molybdenum components.