Sapphire Substrate Subdivision

1.C-Plane sapphire substrate:The most widely used, mainly for sapphire crystal

sapphire crystal

growth along the C axis mature technology, low cost, stable physical and chemical properties, so the C plane carried epitaxy technology is more mature and stable.

2.R-Plane or M-Plane of the sapphire substrate:Mainly used for growing nonpolar/semipolar GaN epitaxial film surface, in order to improve the luminous efficiency. Usually the sapphire substrate, an epitaxial film is grown along the C-axis, C-axis polar axis of GaN, GaN will occur in the quantum well active layer, a strong built-in electric field, resulting in lower emission efficiency, a nonpolar plane GaN epitaxial film may overcome this problem.

3.Patterned sapphire substrate (referred to as PSS):To grow or etching on the sapphire substrate designed to produce nano-scale microstructure pattern specific rules in order to control the output of the LED light in the form, and can also reduce the growth on sapphire substrates dislocations between GaN and improve the epitaxial quality and enhance the quality of LED internal efficiency, increase the light extraction efficiency.