Sapphire Crystal Growth Method Used

1.Czochralski crystal pulling method ( referred to as CZ method ) :The raw

sapphire crystal

material is melted into molten metal is heated to the melting point , and then use molten metal contacting surface of the single sapphire crystal on the seed crystal and the molten metal due to the temperature difference between the solid-liquid interface cold forming , so the molten metal starts to solidify and the growth surface of the seed crystal and a single crystal seed crystal , the same crystal structure of the seed crystal while pulled up at a slow speed , and to a certain rotational speed , gradually solidified molten metal in the grain the kind of liquid-solid interface , forming an axis of symmetry of the single crystal ingot .

2.Kjeldahl crystal growth method ( referred KY method ): Similar to the original CZ method , the raw material is heated to the melting point melted into molten metal , then the seed of a single crystal surface exposed to molten metal in seed soup with melted solid-liquid interface and begin to grow a single crystal seed crystal having the same crystal structure , the seed crystal pulled up at a slow rate , but the formation of the seed crystal is pulled up the neck , the solidification rate of molten metal of such seed stable interface after the seed that is not pulled , do not rotate , so that only a single crystal controlled cooling rate down gradually solidified from above freezing for the entire single crystal ingot.